A defect-free vertical-cavity GaAs-based nanowire laser on silicon emitting at the telecom O-band Nano Letters 25, 14377 (2025) C. Doganlar, P. Schmiedeke, M. Döblinger, J. Zöllner, B. Haubmann, S. Reitberger, K. Müller-Caspary, J. J. Finley, G. Koblmueller Online Ref
Hot carrier dynamics in III-V semiconductor nanowires under dominant radiative and Auger recombination Applied Physics Letters 126, 083505 (2025) H. Esmaielpour, P. Schmiedeke, N. Isaev, C. Doganlar, M. Döblinger, J. J. Finley, G. Koblmueller Online Ref
Low-threshold single ternary GaAsSb nanowire lasers emitting at silicon transparent wavelengths Applied Physics Letters 124, 071112 (2024) P. Schmiedeke, C. Doganlar, H. W. Jeong, M. Doeblinger, J. J. Finley, G. Koblmueller Online Ref
Sb-saturated high-temperature growth of extended, self-catalyzed GaAsSb nanowires on silicon with high quality Nanotechnology 35, 055601 (2023) P. Schmiedeke, M. Döblinger, M.-A. Meinhold-Heerlein, C. Doganlar, J. J. Finley, G. Koblmueller Online Ref
Walter Schottky Institut