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A defect-free vertical-cavity GaAs-based nanowire laser on silicon emitting at the telecom O-band
Nano Letters 25, 14377 (2025)
C. Doganlar, P. Schmiedeke, M. Döblinger, J. Zöllner, B. Haubmann, S. Reitberger, K. Müller-Caspary, J. J. Finley, G. Koblmueller
Online Ref | Continuous wave mid-infrared lasing from single InAs nanowires grown on silicon
Advanced Functional Materials 35, 2414046 (2025)
S. Meder, B. Haubmann, F. del Giudice, P. Schmiedeke, D. Busse, J. Zöllner, J. J. Finley, G. Koblmueller
Online Ref | High-throughput spectroscopy of geometry-tunable arrays of axial InGaAs nanowire heterostructures with twin-induced carrier confinement
Nano Letters in press, DOI:10.1021/acs.nanolett.4c04852 (2024)
H. W. Jeong, S. A. Church, M. Döblinger, A. Ajay, B. Haubmann, N. Patel, J. J. Finley, P. W. Parkinson, G. Koblmueller
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Walter Schottky Institut